Cai, Fensha, Li, Meng, Zhou, Yamei, Tu, Yufei, Liang, Chao, Su, Zhenhuang, Gao, Xingyu, Zeng, Zaiping, Hou, Bo ORCID: https://orcid.org/0000-0001-9918-8223, Li, Zhe, Aldamasy, Mahmoud H., Jiang, Xiaohong, Wang, Shujie and Du, Zuliang 2024. Dipole-tunable interfacial engineering strategy for high-performance all-inorganic red quantum-dot light-emitting diodes. Nano Energy 119 , 109050. 10.1016/j.nanoen.2023.109050 |
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Abstract
All-inorganic quantum dot (QD) light-emitting diodes (AI-QLEDs) with excellent stability received enormous interest in the past few years. Nevertheless, the vast energy offset and the high trap density at the NiOX/QDs interface limit hole injection leading to fluorescence quenching and hampering the performance. Here, we present self-assembled monolayers (SAMs) with phosphonic acid (PA) anchoring groups modifying NiOX hole transport layer (HTL) to tune energy level and passivate trap states. This strategy facilitates hole injection owning to the well-aligned energy level by interface dipole, downshifting the vacuum level, reducing the hole injection barrier from 0.94 eV to 0.28 eV. Meanwhile, it mitigates the interfacial recombination by passivating surface hydroxyl group (-OH) and oxygen vacancy (VO) traps in NiOX. The electron leakage from QDs toward NiOX HTL is significantly suppressed. The all-inorganic R-QLEDs exhibit one of the highest maximum luminance, external quantum efficiency and operational lifetime of 88980 cd m−2, 10.3% and 335045 h (T50@100 cd m−2), respectively. The as-proposed interface engineering provides an effective design principle for high-performance AI-QLEDs for future outdoor and optical projection-type display applications.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Publisher: | Elsevier |
ISSN: | 2211-2855 |
Date of First Compliant Deposit: | 1 November 2023 |
Date of Acceptance: | 28 October 2023 |
Last Modified: | 23 Dec 2023 09:11 |
URI: | https://orca.cardiff.ac.uk/id/eprint/163608 |
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