Tuning the band topology of GdSb by epitaxial strain

Inbar, Hadass S., Ho, Dai Q., Chatterjee, Shouvik, Engel, Aaron N., Khalid, Shoaib, Dempsey, Connor P., Pendharkar, Mihir, Chang, Yu Hao, Nishihaya, Shinichi, Fedorov, Alexei V., Lu, Donghui, Hashimoto, Makoto, Read, Dan ORCID: https://orcid.org/0000-0002-4178-4986, Janotti, Anderson and Palmstrøm, Christopher J. 2023. Tuning the band topology of GdSb by epitaxial strain. APL Materials 11 (11) , 111106. 10.1063/5.0155218

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Abstract

Rare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostatic pressure have shown interesting trends in magnetoresistance, magnetic ordering, and superconductivity, with theory predicting pressure-induced band inversion. Yet, thus far, there have been no direct experimental reports of interchanged band order in RE-Vs due to strain. This work studies the evolution of band topology in biaxially strained GdSb(001) epitaxial films using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). As biaxial strain is tuned from tensile to compressive strain, the gap between the hole and the electron bands dispersed along [001] decreases. The conduction and valence band shifts seen in DFT and ARPES measurements are explained by a tight-binding model that accounts for the orbital symmetry of each band. Finally, we discuss the effect of biaxial strain on carrier compensation and magnetic ordering temperature.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	American Institute of Physics
ISSN:	2166-532X
Date of First Compliant Deposit:	7 November 2023
Date of Acceptance:	10 October 2023
Last Modified:	15 Jan 2024 13:38
URI:	https://orca.cardiff.ac.uk/id/eprint/163693

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