The optimization and analysis of a triple-fin heterostructure-on-insulator fin field-effect transistor with a stacked high-k configuration and 10 nm channel length

Saha, Priyanka, Sankar Dhar, Rudra, Nanda, Swagat, Kumar, Kuleen and Alathbah, Moath 2023. The optimization and analysis of a triple-fin heterostructure-on-insulator fin field-effect transistor with a stacked high-k configuration and 10 nm channel length. Nanomaterials 13 (23) , 3008. 10.3390/nano13233008

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Abstract

The recent developments in the replacement of bulk MOSFETs with high-performance semiconductor devices create new opportunities in attaining the best device configuration with drive current, leakage current, subthreshold swing, Drain-Induced Barrier Lowering (DIBL), and other short-channel effect (SCE) parameters. Now, multigate FETs (FinFET and tri-gate (TG)) are advanced methodologies to continue the scaling of devices. Also, strain technology is used to gain a higher current drive, which raises the device performance, and high-k dielectric material is used to minimize the subthreshold current. In this work, we used stacked high-k dielectric materials in a TG n-FinFET with three fins and a 10 nm channel length, incorporating a three-layered strained silicon channel to determine the short-channel effects. Here, we replaced the gate oxide (SiO2) with a stacked gate oxide of 0.5 nm of SiO2 with a 0.5 nm effective oxide thickness of different high-k dielectric materials like Si3N4, Al2O3, ZrO2, and HfO2. It was found that the use of strained silicon and replacing only the SiO2 device with the stacked SiO2 and HfO2 device was more beneficial to obtain an optimized device with the least leakage and improved drive currents.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Publisher:	MDPI
ISSN:	2079-4991
Date of First Compliant Deposit:	28 November 2023
Date of Acceptance:	18 November 2023
Last Modified:	10 Feb 2024 02:08
URI:	https://orca.cardiff.ac.uk/id/eprint/164368

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