Eblabla, Abdalla  ORCID: https://orcid.org/0000-0002-5991-892X, Varghese, Arathy, Chandrashekar, Hareesh, Uren, Michael J., Kuball, Martin and Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097
2023.
Low-loss MIM capacitor on thick SiO2 dielectric for GaN-on-Si substrates with Standard and elevated top electrode configurations.
Presented at: 53rd European Microwave Conference (EuMC),
Berlin, Germany,
19-21 September 2023.
Proceedings of 53rd European Microwave Conference.
IEEE,
pp. 38-41.
10.23919/EuMC58039.2023.10290587
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Abstract
In this paper, Monolithic Microwave Integrated Circuits (MMICs)-compatible Si3 N4-based metal-insulator-metal (MIM)-capacitors with elevated-electrode realised on thick SiO 2 has been demonstrated for the first time for GaN-on-Si technology. Comparative analysis of DC and RF characteristics has also been presented with a standard MIM structure and a benchmark sample on SiC substrate. The outcomes show achievement of low-current/RF leakage and high breakdown voltage (VBV) capabilities of the proposed capacitor. Further, analysis of RF loss in GaN-on-HR Si substrates was conducted using electromagnetic simulations and small-signal equivalent circuit models that were derived for accurate design of mm-wave integrated circuits. The developed standard and air bridged capacitors showed a VBV exceeding 167 V and 189 V respectively. The current-density leakage (J) observed is below 1μA /cm2 up to 30 V at 125°C. This 13% increase in VBV is achieved with tradeoff of low capacitance density of 68.9% attributed to the additional resistance added by the interconnects. In addition, the proposed air-bridged capacitors achieved low RF leakages of 0.4 dB up to 67 GHz which is 50% lower than the standard MIM capacitor.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Date Type: | Published Online |
| Status: | Published |
| Schools: | Schools > Engineering |
| Publisher: | IEEE |
| ISBN: | 9798350347395 |
| Last Modified: | 06 Jan 2024 02:07 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/164697 |
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