Narrowband photoluminescence of Tin-Vacancy colour centres in Sn-doped chemical vapour deposition diamond microcrystals

Sedov, Vadim, Martyanov, Artem, Neliubov, Arthur, Tiazhelov, Ivan, Savin, Sergey, Eremchev, Ivan, Eremchev, Maksim, Pavlenko, Margarita, Mandal, Soumen ORCID: https://orcid.org/0000-0001-8912-1439, Ralchenko, Victor and Naumov, Andrei 2024. Narrowband photoluminescence of Tin-Vacancy colour centres in Sn-doped chemical vapour deposition diamond microcrystals. Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 382 (2265) , 20230167. 10.1098/rsta.2023.0167

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Abstract

Tin-Vacancy (Sn-V) colour centres in diamond have a spin coherence time in the millisecond range at temperatures of 2 K, so they are promising to be used in diamond-based quantum optical devices. However, the incorporation of large Sn atoms into a dense diamond lattice is a non-trivial problem. The objective of our work is to use microwave plasma-assisted chemical vapour deposition (CVD) to grow Sn-doped diamond with submicron SnO2 particles as a solid-state source of impurity. Well-faceted diamond microcrystals with sizes of a few micrometres were formed on AlN substrates. The photoluminescence (PL) signal with zero-phonon line (ZPL) peak for Sn-V centre at ≈620 nm was measured at room temperature (RT) and at 7 K. The peak width (full width at half-maximum) was measured to be 1.1–1.7 nm at RT and ≈0.05 nm at 7 K. The observed variations of ZPL shape and position, in particular, narrowing of PL peak at RT and formation of single-line fine structure at low-T, are attributed to strain in the crystallites. The diamond doping with Sn via CVD process offers a new route to from Sn-V colour centre in the bulk of the diamond crystallites.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	The Royal Society
ISSN:	1364-503X
Date of Acceptance:	20 July 2023
Last Modified:	12 Feb 2024 12:00
URI:	https://orca.cardiff.ac.uk/id/eprint/165629

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