Fabrication of quantum emitters in aluminum nitride by Al-ion implantation and thermal annealing

Nieto Hernández, E., Yagci, H.B. ORCID: https://orcid.org/0000-0002-8992-2292, Pugliese, V, Aprà, P., Cannon, J.K., Bishop, S.G, Hadden, J. ORCID: https://orcid.org/0000-0001-5407-6754, Ditalia Tchernij, S, Olivero, P, Bennett, Anthony ORCID: https://orcid.org/0000-0002-5386-3710 and Forneris, J. 2024. Fabrication of quantum emitters in aluminum nitride by Al-ion implantation and thermal annealing. Applied Physics Letters 124 (12) , 124003. 10.1063/5.0185534

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Abstract

Single-photon emitters (SPEs) within wide-bandgap materials represent an appealing platform for the development of single-photon sources operating at room temperatures. Group III-nitrides have previously been shown to host efficient SPEs, which are attributed to deep energy levels within the large bandgap of the material, in a configuration that is similar to extensively investigated color centers in diamond. Anti-bunched emission from defect centers within gallium nitride and aluminum nitride (AlN) have been recently demonstrated. While such emitters are particularly interesting due to the compatibility of III-nitrides with cleanroom processes, the nature of such defects and the optimal conditions for forming them are not fully understood. Here, we investigate Al implantation on a commercial AlN epilayer through subsequent steps of thermal annealing and confocal microscopy measurements. We observe a fluence-dependent increase in the density of the emitters, resulting in the creation of ensembles at the maximum implantation fluence. Annealing at 600 °C results in the optimal yield in SPEs formation at the maximum fluence, while a significant reduction in SPE density is observed at lower fluences. These findings suggest that the mechanism of vacancy formation plays a key role in the creation of the emitters and open enticing perspectives in the defect engineering of SPEs in solid state.

Item Type:	Article
Date Type:	Published Online
Status:	Published
Schools:	Engineering
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date of First Compliant Deposit:	5 April 2024
Date of Acceptance:	5 March 2024
Last Modified:	08 Jan 2025 22:19
URI:	https://orca.cardiff.ac.uk/id/eprint/167747

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