Piacibello, Anna, Quaglia, Roberto ![]() ![]() |
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Official URL: https://doi.org/10.1109/LMWT.2024.3384306
Abstract
This letter presents the design of a Doherty power amplifier (DPA) for satellite applications in the Ka -band downlink (17.3–20.3 GHz) implemented on a 100-nm GaN–Si HEMT technology. The design aims to achieve high gain and very high intrinsic linearity over a wide bandwidth of 3 GHz. The experimental characterization on the fabricated chip demonstrates that the DPA can maintain a noise-to-power ratio (NPR) higher than 25 dB and power-added efficiency (PAE) of 30% while providing 36 dBm of output power, when tested with a 100-MHz uniformly distributed signal, achieving state-of-the-art performance among the integrated power amplifiers for satellite communications.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Engineering |
Publisher: | IEEE |
ISSN: | 2771-957X |
Date of First Compliant Deposit: | 11 April 2024 |
Date of Acceptance: | 27 March 2024 |
Last Modified: | 03 Jul 2024 14:45 |
URI: | https://orca.cardiff.ac.uk/id/eprint/167888 |
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