Growth of diamond on high-power electronic material

Mandal, Soumen ORCID: https://orcid.org/0000-0001-8912-1439 2024. Growth of diamond on high-power electronic material. Novel Aspects of Diamond II, Vol. 149. Topics in Applied Physics, SPRINGER-VERLAG BERLIN, pp. 145-174. (10.1007/978-3-031-47556-6_6)

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Abstract

Wide band gap (WBG) semiconductors play an enormous role in high-power electronics application. With ever increasing demand for miniaturisation, efficiency enhancement, low operational cost etc., thermal management in high-power devices is a major challenge. Diamond, known for its exceptional thermal conductivity, is emerging as a highly promising material for effective thermal management. In this chapter direct diamond growth on WBG material like GaN, AlN and –Ga O will be discussed. The surfaces of the WBG will be examined to determine surface charge as inferred by zeta potential measurements. Subsequently, the effect of zeta potential on diamond growth will also be discussed. Finally the diamond layers grown on the WBG will be examined and its properties discussed in detail. The chapter will be concluded with a discussion on major drawbacks of direct diamond growth for thermal management on WBG semiconductor along with the way forward in this context.

Item Type:	Book Section
Date Type:	Published Online
Status:	Published
Schools:	Physics and Astronomy
Publisher:	SPRINGER-VERLAG BERLIN
ISBN:	978-3-031-47555-9
ISSN:	0303-4216
Last Modified:	29 May 2024 08:45
URI:	https://orca.cardiff.ac.uk/id/eprint/169098

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