Annealing process and temperature effects on silicon-vacancy and germanium-vacancy centers in CVD grown polycrystalline diamond

Sedov, Vadim, Martyanov, Artem, Tiazhelov, Ivan, Boldyrev, Kirill, Nosukhin, Sergei, Kuznetsov, Mikhail, Sektarov, Eduard, Krivobok, Vladimir, Nikolaev, Sergey, Savin, Sergey, Mandal, Soumen ORCID: https://orcid.org/0000-0001-8912-1439, Saraykin, Vladimir, Voronov, Valery and Ralchenko, Victor 2024. Annealing process and temperature effects on silicon-vacancy and germanium-vacancy centers in CVD grown polycrystalline diamond. Diamond and Related Materials 146 , 111169. 10.1016/j.diamond.2024.111169

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Abstract

The annealing treatment plays a crucial role in tailoring the properties of synthetic diamond materials, especially those doped with various elements in order to form specific color centers like nitrogen-vacancy (NV), silicon-vacancy (Si-V), germanium-vacancy (Ge-V), etc. This study delves into the annealing of 175 μm-thick Ge-doped polycrystalline diamond (PCD) films grown by microwave plasma-assisted chemical vapor deposition (MPCVD). Large-area PCD plate was cut into smaller equivalent 5 × 5 mm2 pieces, which were separately subjected to annealing in microwave plasma in H2 atmosphere, to annealing in vacuum or to annealing under high-pressure high-temperature conditions (HPHT, 5.9 GPa, 2000 °C). The structure, phase composition and photoluminescence (PL) of samples before and after various annealing processes were investigated. All applied types of annealing enhance both the Si-V and Ge-V lines in PL at room temperature. Increasing annealing temperature leads to gradual decrease of full widths at half-maxima (FWHM) of diamond Raman peak (1332.5 cm−1), as well as Si-V (738 nm) and Ge-V (602 nm) PL peaks. In addition, the limitations for each type of annealing are established. The obtained results are crucial for the design of CVD-grown Ge-doped and Si-doped PCD materials that can be used for applications in photonics such as single photon sources, biomarkers, as well as for the fabrication of optical diamond thermometers.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	Elsevier
ISSN:	0925-9635
Date of Acceptance:	6 May 2024
Last Modified:	04 Jun 2024 09:45
URI:	https://orca.cardiff.ac.uk/id/eprint/169239

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