Emission dynamics of optically driven aluminum nitride quantum emitters

Guo, Yanzhao, Hadden, John P. ORCID: https://orcid.org/0000-0001-5407-6754, Clark, Rachel N., Bishop, Samuel G. and Bennett, Anthony J. ORCID: https://orcid.org/0000-0002-5386-3710 2024. Emission dynamics of optically driven aluminum nitride quantum emitters. Physical Review B 110 , 014109. 10.1103/PhysRevB.110.014109

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Abstract

Aluminum nitride is a technologically important wide band-gap semiconductor which has been shown to host bright quantum emitters. We use photon emission correlation spectroscopy (PECS), time-resolved photoluminescence (TRPL), and state-population dynamic simulations to probe the dynamics of emission under continuous wave (CW) and pulsed optical excitation. We infer that there are at least four dark shelving states, which govern the TRPL, bunching, and saturation of the optical transition. We study in detail the emission dynamics of two quantum emitters (QEs) with differing power-dependent shelving processes, hypothesized to result from charge ionization and recombination. These results demonstrate that photon bunching caused by shelving the system in a dark state inherently limits the saturation rate of the photon source. In emitters where increasing optical power deshelves the dark states, we observe an increased photon emission intensity.

Item Type:	Article
Date Type:	Published Online
Status:	Published
Schools:	Engineering
ISSN:	1095-3795
Date of First Compliant Deposit:	9 July 2024
Date of Acceptance:	28 June 2024
Last Modified:	09 Nov 2024 05:30
URI:	https://orca.cardiff.ac.uk/id/eprint/170439

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