Optical and electrical properties of III-nitride quantum light sources

Cannon, Joseph 2024. Optical and electrical properties of III-nitride quantum light sources. PhD Thesis, Cardiff University. Item availability restricted.

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Abstract

Convenient sources of single photons are a cornerstone for the next generation of quantum technologies. By generating single photons at room-temperature, exciting sensing and communications devices can be made. Semiconductor quantum light emitting sources have received much attention in recent years as some quantum emitters can operate at room-temperature. The III-nitride family in particular hosts defect states in the bandgap that show promise for cheap, commercialisable single-photon sources without the need for demanding cryogenic cooling requirements. In this thesis, quantum emitters in aluminium nitride and gallium nitride are investigated. To gain an insight into the physical origin of AlN on sapphire quantum emitters, an efficient method of surveying the ensemble polarisation statistics of many emitters was developed. The deterministic production of quantum emitters is key to the utility of these light sources. Efforts to generate quantum emitters by growth and ion implantation are explored to this end. A quantum light source in aluminium nitride grown in a silicon substrate was identified. Finally, the tuning of quantum emitters by exploiting the DC Stark effect was investigated in gallium nitride based emitters.

Item Type:	Thesis (PhD)
Date Type:	Completion
Status:	Unpublished
Schools:	Engineering
Uncontrolled Keywords:	III-Nitride Quantum emitters Single photon source Room temperature Compound semiconductors Photonics
Funders:	EPSRC
Date of First Compliant Deposit:	1 November 2024
Last Modified:	01 Nov 2024 13:04
URI:	https://orca.cardiff.ac.uk/id/eprint/173599

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