First demonstration of 940-nm VCSELs fabricated over 200-mm GaAs- and Ge-substrates

Gillgrass, S.J., Baker, J., Allford, C.P. ORCID: https://orcid.org/0000-0002-3798-9014, Johnson, A., Davies, J.I., Shutts, S. ORCID: https://orcid.org/0000-0001-6751-7790 and Smowton, P.M. ORCID: https://orcid.org/0000-0002-9105-4842 2024. First demonstration of 940-nm VCSELs fabricated over 200-mm GaAs- and Ge-substrates. Presented at: IEEE 29th International Semiconductor Laser Conference (ISLC), Orlando, FL, USA, 29 September - 02 October 2024. 2024 IEEE 29th International Semiconductor Laser Conference (ISLC). IEEE, 10.1109/islc57752.2024.10717349

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Abstract

We report on the first fabricated and characterized full 200 mm VCSEL wafers. We investigate performance of nominally identical VCSEs, across 200 mm, grown on both GaAs and Ge-substrates. Germanium offers a reduction in bow compared to standard GaAs substrates typically used in AlGaAs-based VCSELs, providing a route to larger diameter wafers and longer emission wavelengths in this material system.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Published Online
Status:	Published
Schools:	Physics and Astronomy
Publisher:	IEEE
ISBN:	9798350372991
Date of First Compliant Deposit:	18 November 2024
Last Modified:	07 Jan 2025 10:15
URI:	https://orca.cardiff.ac.uk/id/eprint/173650

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