Room temperature lasing from InGaAs quantum well nanowires on silicon-on-insulator substrates

Temu, Balthazar, Yan, Zhao, Ratiu, Bogdan-Petrin, Oh, Sang Soon ORCID: https://orcid.org/0000-0003-3093-7016 and Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704 2024. Room temperature lasing from InGaAs quantum well nanowires on silicon-on-insulator substrates. Applied Physics Letters 125 (22) , 223501. 10.1063/5.0237589

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Abstract

In this work we demonstrate room temperature lasing from core-shell nanowires consisting of a radial quantum well as the active material. The nanowires with the / / quantum well structures are arranged in a deformed honeycomb lattice, forming a photonic crystal surface emitting laser (PCSEL). We demonstrate lasing from devices with three different nanowire diameters from undeformed, stretched, and compressed honeycomb lattices. Under optical pumping we show that the PCSEL lases at the wavelength of 966 nm (stretched pattern), with the lasing threshold of 103 μJ ⁠. The lasing wavelength increases as the nanowire diameter increases. Combining photoluminescence results and numerical simulations on the field profile and the quality factors of the devices, we establish that the lasing of the device is from the radial quantum well structure.

Item Type:	Article
Date Type:	Published Online
Status:	Published
Schools:	Physics and Astronomy
Publisher:	American Institute of Physics
ISSN:	0003-6951
Funders:	EPSRC
Date of First Compliant Deposit:	26 November 2024
Date of Acceptance:	7 November 2024
Last Modified:	09 Jan 2025 15:05
URI:	https://orca.cardiff.ac.uk/id/eprint/174312

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