13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD

Brown, Richard, Liu, Chen, Seager, George, Alvarado, Francisco, Wong, Ka Ming, Craig, Adam P., Beanland, Richard, Marshall, Andrew R. J., Davies, J. Iwan and Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704 2025. 13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD. APL Photonics 10 (1) , 016102. 10.1063/5.0231448

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Abstract

In this work, we report the growth and fabrication optimization of a long wavelength InAs/GaSb type-II superlattice (T2SL) nBn detector grown by metal–organic chemical vapor deposition. A GaAs like interfacial scheme was employed to grow the T2SLs matched to InAs substrates. A larger bandgap InAs/GaSb T2SL was used as an electron barrier, removing the need for AlSb based materials within this detector. At 77 K and −0.1 V, the photodetector showed a dark current density of 2.2 × 10−2 A cm−2 and a 100% cutoff wavelength of 13 µm. The external quantum efficiency was found to be 54.4% at 9 µm. The peak detectivity was found to be 4.43 × 1010 cm Hz1/2/W at 9 µm, which is very comparable with similar deep etched detectors grown by molecular beam epitaxy.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	American Institute of Physics
ISSN:	2378-0967
Funders:	EPSRC
Date of First Compliant Deposit:	8 January 2025
Date of Acceptance:	16 December 2024
Last Modified:	15 Jan 2025 13:18
URI:	https://orca.cardiff.ac.uk/id/eprint/175127

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