The effect of rapid thermal annealing on 1.55 μm InAs/InP quantum dots

Dear, Calum, Park, Jae-Seong, Jia, Hui, El Hajraoui, Khalil, Yuan, Jiajing, Wang, Yangqian, Hou, Yaonan, Deng, Huiwen, Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704, Ramasse, Quentin, Seeds, Alwyn, Tang, Mingchu and Liu, Huiyun 2025. The effect of rapid thermal annealing on 1.55 μm InAs/InP quantum dots. Journal of Physics D: Applied Physics 58 , 125104. 10.1088/1361-6463/adabf1

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Abstract

Rapid thermal annealing (RTA) can be used as a post-growth method to adjust the optical properties of III–V materials. This work investigates the efficacy of applying cyclic RTA to 1.55 μm multi-layer InAs/InAlGaAs quantum dots (QDs) grown on (001) InP substrate by molecular beam epitaxy. Samples cyclically-annealed at 600 °C retain most of their as-grown optical, structural, and compositional characteristics whilst exhibiting a 4.6-fold increase in peak PL intensity. This strategy was successfully implemented in broad-area devices with improved slope efficiency and output power, demonstrating cyclic RTA as an effective method in enhancing high-performance 1.55 μm QD lasers on InP (001) substrates.

Item Type:	Article
Status:	Published
Schools:	Schools > Physics and Astronomy
Publisher:	IOP Publishing
ISSN:	0022-3727
Funders:	EPSRC
Date of First Compliant Deposit:	18 February 2025
Date of Acceptance:	20 January 2025
Last Modified:	18 Feb 2025 12:01
URI:	https://orca.cardiff.ac.uk/id/eprint/175423

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