Highly efficient operation modes in GaN power transistors delivering upwards of 81% efficiency and 12W output power

Wright, Peter Thomas, Sheikh, Aamir, Roff, Chris, Tasker, Paul J. ORCID: https://orcid.org/0000-0002-6760-7830 and Benedikt, Johannes ORCID: https://orcid.org/0000-0002-9583-2349 2008. Highly efficient operation modes in GaN power transistors delivering upwards of 81% efficiency and 12W output power. Presented at: IEEE MTT-S International Microwave Symposium, Atlanta, GA, USA, 15-20 June 2008. Proceedings of the IEEE MTT-S International Microwave Symposium Digest, Atlanta, USA, 15-20 June 2008. Piscataway, NJ: Institute of Electrical and Electronics Engineers, pp. 1147-1150. 10.1109/MWSYM.2008.4633260

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Abstract

This paper investigates the development of an inverse class-F design procedure for obtaining very high efficiency performance at high power levels. RF waveform engineering was used to obtain high efficiency inverse class-F waveforms at the device current-generator plane. Drain efficiencies above 81% have been achieved at 0.9 and 2.1 GHz for a wide band-gap gallium nitride (GaN) HEMT transistor and 12 W fundamental output power. Investigations into improvements in drain efficiency through increases in drain bias voltage have yielded drain efficiencies of up to 84% at 2.1 GHz. To the authorpsilas knowledge, the efficiencies presented in this study are the highest published, measured efficiencies of a high power GaN HEMT at these frequencies.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Engineering
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Publisher:	Institute of Electrical and Electronics Engineers
ISBN:	9781424417803
Last Modified:	18 Oct 2022 14:28
URI:	https://orca.cardiff.ac.uk/id/eprint/17594

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