Park, Jae-Seong, Deng, Huiwen, Pan, Shujie, Wang, Hexing, Wang, Yangqian, Yuan, Jiajing, Zhang, Xuanchang, Zeng, Haotian, Jia, Hui, Dang, Manyu, Mishra, Pawan, Jandu, George, Chen, Siming, Smowton, Peter M.  ORCID: https://orcid.org/0000-0002-9105-4842, Seeds, Alwyn, Liu, Huiyun and Tang, Mingchu
2025.
High operating temperature (> 200 °C) InAs/GaAs quantum-dot laser with co-doping technique.
Journal of Physics D: Applied Physics
58
(18)
, 185101.
10.1088/1361-6463/adc275
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Abstract
Working reliably at elevated operating temperatures is a key requirement for semiconductor lasers used in optical communication. InAs/GaAs quantum-dot (QD) lasers have been considered a promising solution due to the discrete energy states of QDs. This work demonstrates temperature-insensitive and low threshold InAs/GaAs QD lasers incorporating co-doping technique, compared with p-type modulation doping. 2 mm long co-doped QD lasers exhibit a low threshold current density of 154 A cm−2 (210 A cm−2) and operate at a high heatsink temperature of 205 °C (160 °C) under the pulsed (continuous-wave) mode, outperforming the p-type doped QD lasers. The results reveal that co-doping effectively enhances both high-temperature stability and threshold reduction in InAs/GaAs QD lasers, surpassing the performance of conventional p-type modulation doping. This approach offers a pathway toward cooling-free operation, making co-doped QD lasers suitable for data and telecommunication applications.
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Publisher: | IOP Publishing |
| ISSN: | 0022-3727 |
| Date of First Compliant Deposit: | 28 March 2025 |
| Date of Acceptance: | 19 March 2025 |
| Last Modified: | 28 Mar 2025 17:10 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/177270 |
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