Mishra, Pawan, Jarvis, Lydia, Hodges, Chris  ORCID: https://orcid.org/0000-0002-4993-4547, Enderson, Abigail, Albeladi, Fwoziah, Gillgrass, Sara-Jayne, Jandu, George, Forrest, Richard, Allford, Craig P. ORCID: https://orcid.org/0000-0002-3798-9014, Deng, Huiwen, Tang, Mingchu, Liu, Huiyun, Shutts, Samuel ORCID: https://orcid.org/0000-0001-6751-7790 and Smowton, Peter M. ORCID: https://orcid.org/0000-0002-9105-4842
2025.
High temperature operation of co-doped InAs quantum dot laser for O-band emission.
IEEE Photonics Journal
17
(3)
, 0600606.
10.1109/jphot.2025.3560443
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Abstract
We demonstrate high temperature operation of InAs quantum dot lasers through active region engineering. We grew an n-doped region within the InAs quantum dot (QD) layer and incorporated a 10 nm p-GaAs modulation-doped layer within a 43 nm GaAs spacer layer, both of which are essential components of the active region of the InAs QD laser device. The co-doping scheme enables the demonstration of InAs QD laser device with only seven layers of InAs QDs in the active region for high temperature operation, which is compared with a conventional undoped InAs QD laser device. A Fabry-Pérot laser device with as-cleaved facets and a co-doped InAs QD active region enables ultra-high temperature pulsed-biased O-band laser operation up to 202°C, compared to 180°C for conventional undoped InAs QD laser, and without requiring high-reflective facet coatings.
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Publisher: | Institute of Electrical and Electronics Engineers |
| ISSN: | 1943-0655 |
| Date of First Compliant Deposit: | 30 April 2025 |
| Date of Acceptance: | 9 April 2025 |
| Last Modified: | 05 Jun 2025 14:45 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/177983 |
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