High temperature operation of co-doped InAs quantum dot laser for O-band emission

Mishra, Pawan, Jarvis, Lydia, Hodges, Chris ORCID: https://orcid.org/0000-0002-4993-4547, Enderson, Abigail, Albeladi, Fwoziah, Gillgrass, Sara-Jayne, Jandu, George, Forrest, Richard, Allford, Craig P. ORCID: https://orcid.org/0000-0002-3798-9014, Deng, Huiwen, Tang, Mingchu, Liu, Huiyun, Shutts, Samuel ORCID: https://orcid.org/0000-0001-6751-7790 and Smowton, Peter M. ORCID: https://orcid.org/0000-0002-9105-4842 2025. High temperature operation of co-doped InAs quantum dot laser for O-band emission. IEEE Photonics Journal 10.1109/jphot.2025.3560443

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Abstract

We demonstrate high temperature operation of InAs quantum dot lasers through active region engineering. We grew an n-doped region within the InAs quantum dot (QD) layer and incorporated a 10 nm p-GaAs modulation-doped layer within a 43 nm GaAs spacer layer, both of which are essential components of the active region of the InAs QD laser device. The co-doping scheme enables the demonstration of InAs QD laser device with only seven layers of InAs QDs in the active region for high temperature operation, which is compared with a conventional undoped InAs QD laser device. A Fabry-Pérot laser device with as-cleaved facets and a co-doped InAs QD active region enables ultra-high temperature pulsed-biased O-band laser operation up to 202°C, compared to 180°C for conventional undoped InAs QD laser, and without requiring high-reflective facet coatings.

Item Type:	Article
Date Type:	Published Online
Status:	In Press
Schools:	Schools > Physics and Astronomy
Additional Information:	License information from Publisher: LICENSE 1: URL: https://creativecommons.org/licenses/by/4.0/legalcode, Start Date: 2025-01-01
Publisher:	Institute of Electrical and Electronics Engineers
ISSN:	1943-0655
Date of First Compliant Deposit:	30 April 2025
Last Modified:	30 Apr 2025 11:15
URI:	https://orca.cardiff.ac.uk/id/eprint/177983

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