Cuenca, Jerome A.  ORCID: https://orcid.org/0000-0003-1370-1167, Al-Moathin, Ali, Kappers, Menno J., Mandal, Soumen ORCID: https://orcid.org/0000-0001-8912-1439, Kuball, Martin, Oliver, Rachel A., Li, Chong and Williams, Oliver A. ORCID: https://orcid.org/0000-0002-7210-3004
2025.
Microwave plasma modelling for thick diamond deposition on III-nitrides.
Carbon
241
, 120349.
10.1016/j.carbon.2025.120349
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Abstract
Microwave plasma chemical vapour deposition (MP-CVD) of thick polycrystalline diamond (PCD) () is demonstrated on flipped III-nitrides (III-N)/gallium nitride (GaN) on Si using a sample holder designed using iterative microwave plasma modelling. The damage of flipped III-N/GaN in H plasma is due to superheating, caused by expansion of voids in the bonding layer from the flipping process and etching of the III-N/GaN film at an onset of above 720 °C. This study demonstrates that holders with a tapered base allow rapid sample cooling (°C) to mitigate damage in a reactive hydrogen plasma at high-power and pressure. This holder enables, high quality thick PCD deposition and demonstrates the importance of microwave plasma modelling for cost-effective iteration of sample holder/susceptor design for temperature regulation.
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Additional Information: | License information from Publisher: LICENSE 1: Title: This article is under embargo with an end date yet to be finalised. |
| Publisher: | Elsevier |
| ISSN: | 0008-6223 |
| Date of First Compliant Deposit: | 6 May 2025 |
| Date of Acceptance: | 16 April 2025 |
| Last Modified: | 04 Jun 2025 13:27 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/178095 |
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