Jia, Hui, Park, Jae-Seong, Zeng, Haotian, Yuan, Jiajing, Li, Jun, Wang, Yangqian, Liu, Shangfeng, Chen, Chong, Dear, Calum, Deng, Huiwen, Martin, Mickael, Li, Qiang ![]() ![]() |
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Official URL: http://dx.doi.org/10.1109/SiPhotonics64386.2025.10...
Abstract
We have developed low threshold InP-based L-band quantum (QD) lasers monolithically grown on Si substrates for photonic integration. To overcome the fundamental challenges of growing high-density, high uniformity QDs on InP-based material system, QD thickness in combination with a modified indium flush technique was adopted, resulting in a low threshold current density of 1.35 kA/cm2 and pulsed lasing up to 100 °C. These results represent progress in C-/L-band QD laser development on Si, highlighting the potential for high-performance semiconductor light source for long-haul telecommunication applications.
Item Type: | Conference or Workshop Item (Paper) |
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Date Type: | Published Online |
Status: | Published |
Schools: | Schools > Physics and Astronomy |
Publisher: | IEEE |
ISBN: | 979-8-3315-0618-6 |
ISSN: | 1949-2081 |
Funders: | EPSRC |
Date of First Compliant Deposit: | 27 May 2025 |
Date of Acceptance: | 16 April 2025 |
Last Modified: | 27 May 2025 14:15 |
URI: | https://orca.cardiff.ac.uk/id/eprint/178329 |
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