Jia, Hui, Park, Jae-Seong, Zeng, Haotian, Yuan, Jiajing, Li, Jun, Wang, Yangqian, Liu, Shangfeng, Chen, Chong, Dear, Calum, Deng, Huiwen, Martin, Mickael, Li, Qiang  ORCID: https://orcid.org/0000-0002-5257-7704, Baron, Thierry, Tang, Mingchu, Seeds, Alwyn and Liu, Huiyun
2025.
Low threshold InAs/InP quantum dot lasers on Si.
Presented at: IEEE Silicon Photonics Conference (SiPhotonics),
London, UK,
14-17 April 2025.
2025 IEEE Silicon Photonics Conference (SiPhotonics).
IEEE,
10.1109/SiPhotonics64386.2025.10984482
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Official URL: http://dx.doi.org/10.1109/SiPhotonics64386.2025.10...
Abstract
We have developed low threshold InP-based L-band quantum (QD) lasers monolithically grown on Si substrates for photonic integration. To overcome the fundamental challenges of growing high-density, high uniformity QDs on InP-based material system, QD thickness in combination with a modified indium flush technique was adopted, resulting in a low threshold current density of 1.35 kA/cm2 and pulsed lasing up to 100 °C. These results represent progress in C-/L-band QD laser development on Si, highlighting the potential for high-performance semiconductor light source for long-haul telecommunication applications.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Date Type: | Published Online |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Publisher: | IEEE |
| ISBN: | 979-8-3315-0618-6 |
| ISSN: | 1949-2081 |
| Funders: | EPSRC |
| Date of First Compliant Deposit: | 27 May 2025 |
| Date of Acceptance: | 16 April 2025 |
| Last Modified: | 27 May 2025 14:15 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/178329 |
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