Cardiff University | Prifysgol Caerdydd ORCA
Online Research @ Cardiff 
WelshClear Cookie - decide language by browser settings

Low threshold InAs/InP quantum dot lasers on Si

Jia, Hui, Park, Jae-Seong, Zeng, Haotian, Yuan, Jiajing, Li, Jun, Wang, Yangqian, Liu, Shangfeng, Chen, Chong, Dear, Calum, Deng, Huiwen, Martin, Mickael, Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704, Baron, Thierry, Tang, Mingchu, Seeds, Alwyn and Liu, Huiyun 2025. Low threshold InAs/InP quantum dot lasers on Si. Presented at: IEEE Silicon Photonics Conference (SiPhotonics), London, UK, 14-17 April 2025. 2025 IEEE Silicon Photonics Conference (SiPhotonics). IEEE, 10.1109/SiPhotonics64386.2025.10984482

[thumbnail of Low threshold InAs_InP QD lasers on Si.pdf]
Preview
PDF - Accepted Post-Print Version
Download (331kB) | Preview

Abstract

We have developed low threshold InP-based L-band quantum (QD) lasers monolithically grown on Si substrates for photonic integration. To overcome the fundamental challenges of growing high-density, high uniformity QDs on InP-based material system, QD thickness in combination with a modified indium flush technique was adopted, resulting in a low threshold current density of 1.35 kA/cm2 and pulsed lasing up to 100 °C. These results represent progress in C-/L-band QD laser development on Si, highlighting the potential for high-performance semiconductor light source for long-haul telecommunication applications.

Item Type: Conference or Workshop Item (Paper)
Date Type: Published Online
Status: Published
Schools: Schools > Physics and Astronomy
Publisher: IEEE
ISBN: 979-8-3315-0618-6
ISSN: 1949-2081
Funders: EPSRC
Date of First Compliant Deposit: 27 May 2025
Date of Acceptance: 16 April 2025
Last Modified: 27 May 2025 14:15
URI: https://orca.cardiff.ac.uk/id/eprint/178329

Actions (repository staff only)

Edit Item Edit Item

Downloads

Downloads per month over past year

View more statistics