Vortex beam lasing from III-V nanowires epitaxially grown on silicon-on-insulator

Ratiu, Bogdan-Petrin, Wang, Ji Tong, Netherwood, Kyle, Grieb, Tim, Rosenauer, Andreas, Oh, Sang Soon ORCID: https://orcid.org/0000-0003-3093-7016, Panoiu, Nicolae-Coriolan and Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704 2025. Vortex beam lasing from III-V nanowires epitaxially grown on silicon-on-insulator. Laser and Photonics Reviews , e01297. 10.1002/lpor.202501297

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Abstract

Photonic crystal lasers can be used to achieve high emission powers with exceptional beam quality. Vortex beams carrying orbital angular momentum have found applications in areas such as free space communication, optical trapping, and microscopy. In this paper, the growth and operation of an epitaxially grown InGaAs nanowire photonic crystal laser on silicon on insulator, emitting a vortex beam, are investigated. The device is composed of a honeycomb array of nanowires, with compressed and expanded configurations to make use of the band inversion phenomenon. The resulting bound-state-in-the-continuum modes are characterized using simulations and confirmed by measurement.

Item Type:	Article
Date Type:	Published Online
Status:	In Press
Schools:	Schools > Physics and Astronomy
Publisher:	Wiley-VCH Verlag
ISSN:	1863-8880
Funders:	EPSRC
Date of First Compliant Deposit:	19 August 2025
Date of Acceptance:	4 August 2025
Last Modified:	20 Aug 2025 09:30
URI:	https://orca.cardiff.ac.uk/id/eprint/180535

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