Salmond, Ben, Simpson, Tom, Peach, Tomas, Liu, Shangfeng, Wale, Michael, Meredith, Wyn, Li, Qiang  ORCID: https://orcid.org/0000-0002-5257-7704, Smowton, Peter M., Shutts, Samuel, Belyanin, Alexey A. and Smowton, Peter M. ORCID: https://orcid.org/0000-0002-9105-4842
2025.
MOCVD-grown c-band InAs/InAlGaAs quantum dot laterally-coupled distributed feedback lasers.
Presented at: OPTO 2025,
San Francisco, California, USA,
25-31 January 2025.
Published in: Belyanin, Alexey A. and Smowton, Peter M. eds.
Proceedings of SPIE, Novel In-Plane Semiconductor Lasers XXIV.
, vol.PC1338
SPIE,
10.1117/12.3048183
|
Abstract
There is a need for increased bandwidth in long range data communication systems. One potential way of achieving this is to increase the number of channels in wavelength division multiplexing systems (WDMs) by using quantum dot distributed feedback (DFB) lasers as the single-mode emitters. This bandwidth increase is provided by inhomogeneous size broadening, which broadens the gain spectrum and therefore the range of accessible wavelengths. We have fabricated laterally-coupled DFB lasers on both conventional quantum well material and InAs/InAlGaAs quantum dot material grown using metal-organic chemical vapour deposition (MOCVD). We have achieved threshold currents of 150 mA and a SMSR exceeding 40 dB with a cavity length of 1 mm.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Publisher: | SPIE |
| Last Modified: | 10 Sep 2025 13:26 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/180949 |
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