Self-powered vacuum ultraviolet photodetector based on a BAlN/Si/BAlN double heterojunction

Zhang, Zhihao, Li, Qiang, Chen, Ransheng, Fang, Wannian, Liu, Kangkang, Chen, Youwei, Liu, Haifeng, Lin, Ziyan, Yun, Feng and Wang, Tao 2025. Self-powered vacuum ultraviolet photodetector based on a BAlN/Si/BAlN double heterojunction. Optics Letters 50 (17) , pp. 5370-5373. 10.1364/ol.568977

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Abstract

Hexagonal boron nitride (hBN) and Al-doped BxAl1-xN films were grown on Si(100) substrates by means of a radio frequency magnetron sputtering technique. These films have been fabricated into hBN/Si and BAlN/Si heterojunctions, respectively. The heterojunction of hBN/Si exhibited an excellent response to vacuum ultraviolet (VUV) light at 185 nm. By incorporating Al into hBN, the BAlN/Si heterostructure demonstrated a response performance and weak self-powered characteristics. In order to further improve the self-powering performance, a BAlN/Si/BAlN double-heterojunction has been designed and then prepared, leading to high-sensitivity detection with a light-to-dark current ratio of 3600 and a responsivity of 70 mA/W at 185 nm under zero bias.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Additional Information:	License information from Publisher: LICENSE 1: URL: https://doi.org/10.1364/OA_License_v2#VOR, Start Date: 2025-08-25
Publisher:	Optica Publishing Group
ISSN:	0146-9592
Date of Acceptance:	19 July 2025
Last Modified:	10 Sep 2025 09:45
URI:	https://orca.cardiff.ac.uk/id/eprint/181030

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