Optical gain in O-band active regions with multiple dot-in-well layers

Jandu, G. M., Smith, A. R., Allford, C. P. ORCID: https://orcid.org/0000-0002-3798-9014, Power, S., Mishra, P., Cao, Z., Jarvis, L., Zhang, X., Deng, H., Tang, M., Liu, H. and Smowton, P. M. ORCID: https://orcid.org/0000-0002-9105-4842 2025. Optical gain in O-band active regions with multiple dot-in-well layers. APL Photonics 10 (10) , 106112. 10.1063/5.0275039

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Abstract

The optimum number of layers in InAs-based quantum dot-in-well active regions is investigated by means of sophisticated measurements of structures containing 8, 12, and 14 dot-in-well layers. Measurements of optical gain vs a parameter proportional to the carrier density indicate that additional layers do provide a proportional increase in the available gain at a given carrier density. This indicates that unequal optical overlap and unequal electrical pumping of the different layers are not significant effects. It is suggested that performance better than that of the typically used seven or eight layers may occur for samples with a higher layer number with reduced levels of p-modulation doping to minimize internal optical mode loss and non-radiative recombination.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Additional Information:	License information from Publisher: LICENSE 1: URL: https://creativecommons.org/licenses/by-nc/4.0/, Start Date: 2025-10-14
Publisher:	American Institute of Physics
Date of First Compliant Deposit:	27 October 2025
Date of Acceptance:	1 October 2025
Last Modified:	27 Oct 2025 13:46
URI:	https://orca.cardiff.ac.uk/id/eprint/181918

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