Jia, Hui, Park, Jae-Seong, Li, Jun, Liu, Kongming, Yuan, Jiajing, Dear, Calum, Zeng, Haotian, Wang, Yangqian, Hajraoui, Khalil El, Liu, Shangfeng, Deng, Huiwen, Martin, Mickael, Hou, Yaonan, Ramasse, Quentin M., Beanland, Richard, Li, Qiang  ORCID: https://orcid.org/0000-0002-5257-7704, Baron, Thierry, Tang, Mingchu, Seeds, Alwyn and Liu, Huiyun
2025.
InAs/InAlGaAs quantum dot lasers on InP and Si.
IEEE Journal of Selected Topics in Quantum Electronics
10.1109/JSTQE.2025.3641548
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Abstract
We report the development of InAs/InAlGaAs quantum-dot (QD) lasers grown on both InP and Si substrates. A modified indium flush technique was employed to control dot-height distribution and tailor the emission wavelength by using a strained partial capping layer. Using this approach, 7-stack InAs/InAlGaAs QD lasers on InP substrates exhibit a low threshold current density (Jth) of 63 A/cm2 per QD layer and high-temperature operation up to 140°C. Furthermore, electrically pumped InAs/InAlGaAs QD lasers directly grown on Si are also demonstrated, with a low Jth of 1.35 kA/cm2 and a maximum operating temperature of 100°C. This work highlights the effectiveness of the modified indium flush in achieving high-performance InAs/InAlGaAs QD lasers. These results represent a significant step forward in the development of high-performance C-/L-band QD lasers in the InAs/InAlGaAs/InP material system for Si photonics.
| Item Type: | Article |
|---|---|
| Date Type: | Published Online |
| Status: | In Press |
| Schools: | Schools > Physics and Astronomy |
| Additional Information: | RRS applied 12/12/2025 AB |
| Publisher: | Institute of Electrical and Electronics Engineers |
| ISSN: | 1077-260X |
| Funders: | EPSRC |
| Date of First Compliant Deposit: | 10 December 2025 |
| Date of Acceptance: | 2 December 2025 |
| Last Modified: | 12 Dec 2025 14:30 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/183084 |
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