Recent progress and future prospects of LWIR T2SL InAs/GaSb detectors on GaAs

Phanis, Paradeisa E. O’Dowd, Alshahrani, Dhafer O., Kwan, Dominic C. M., Huffaker, Diana L., Anyebe, Ezekiel Anyebe and Kesaria, Manoj ORCID: https://orcid.org/0000-0003-1664-0806 2026. Recent progress and future prospects of LWIR T2SL InAs/GaSb detectors on GaAs. Advanced Photonics Research 7 (7) , e70231. 10.1002/adpr.70231

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Abstract

Gallium-based type-II superlattices (T2SLs) are strong contenders for next-generation long-wavelength infrared (LWIR) focal-plane array (FPA) detectors. Although they are mostly grown on GaSb substrates, the lack of large-size wafers, their relatively low conductivity, and their relatively high cost have hampered their extensive utilization in FPA. GaAs substrates are currently being explored as a viable alternative to GaSb as they are cost-effective and offer higher yield. However, LWIR T2SLs exhibit a relatively large lattice mismatch with GaAs, potentially leading to a high density of threading dislocations that are detrimental to the material’s quality and device performance. This review provides an overview of the challenges in the heteroepitaxy of GaSb on GaAs substrates and possible strategies employed to mitigate these bottlenecks. The state-of-the-art T2SL on GaAs substrates has also been surveyed. Finally, prospects for fabricating FPAs on GaAs have been discussed.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Publisher:	Wiley Open Access
ISSN:	2699-9293
Funders:	EPSRC
Projects:	EP/S024441/1
Date of First Compliant Deposit:	20 July 2026
Date of Acceptance:	25 May 2026
Last Modified:	18 Aug 2026 12:53
URI:	https://orca.cardiff.ac.uk/id/eprint/188300

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