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Theoretical and experimental analysis of current spreading in AIGaInP light emitting diodes

Perks, Richard Marc ORCID:, Kettle, J, Morgan, David Vernon and Porch, Adrian ORCID: 2006. Theoretical and experimental analysis of current spreading in AIGaInP light emitting diodes. Journal of Applied Physics 100 (8) , 083109. 10.1063/1.2358396

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The profile of light emission from aluminum gallium indium phosphide (AlGaInP) light emitting diodes has been studied and compared with the theoretical modeling of current spreading using a lossy transmission line model of current injected into the active region. Discrepancies between the experimentally determined emission profile and the theoretically predicted current injected into the active region have been analyzed and explained using a Monte Carlo ray tracing simulation which considers the trajectories of the photons after leaving the active region and the particular geometry of the device current, die size, and current spreading layer resistance upon the emitted emission profile. The combination of the current spreading and ray tracing models give very good agreement with the experimental emission profiles for both thin and thick current spreading layers.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Additional Information: ------- Publisher's copyright requirements "Copyright (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Tian, Y and Li, G and Shinar, J and Wang, N. L. and Cook, B A and Anderegg, J. W. and Constant, A. P. and Russell, A M and Snyder, John Evan (2004) Electrical transport in amorphous semiconducting AlMgB14 films. Applied Physics Letters , 85 (7). pp. 1181-1183. ISSN 10773118 (10.1063/1.1781738)and may be found at"
Publisher: American Institute of Physics
ISSN: 1089-7550
Last Modified: 05 May 2023 10:57

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