Electrical transport in amorphous semiconducting AlMgB14 films

Tian, Y, Li, G, Shinar, J, Wang, N. L., Cook, B A, Anderegg, J. W., Constant, A. P., Russell, A M and Snyder, John Evan 2004. Electrical transport in amorphous semiconducting AlMgB14 films. Applied Physics Letters 85 (7) , pp. 1181-1183. 10.1063/1.1781738

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Abstract

The electrical transport properties of semiconducting AlMgB14 films deposited at room temperature and 573?K are reported in this letter. The as-deposited films are amorphous, and they exhibit high n-type electrical conductivity, which is believed to stem from the conduction electrons donated by Al, Mg, and/or Fe impurities in these films. The film deposited at 573?K is less conductive than the room-temperature-deposited film. This is attributed to the nature of donor or trap states in the band gap related to the different deposition temperatures.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Additional Information:	Publisher's copyright requirements "Copyright (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Tian, Y and Li, G and Shinar, J and Wang, N. L. and Cook, B A and Anderegg, J. W. and Constant, A. P. and Russell, A M and Snyder, John Evan (2004) Electrical transport in amorphous semiconducting AlMgB14 films. Applied Physics Letters , 85 (7). pp. 1181-1183. ISSN 10773118 (10.1063/1.1781738)and may be found at http://apl.aip.org/resource/1/applab/v85/i7/p1181_s1."
ISSN:	10773118
Last Modified:	26 May 2023 16:20
URI:	https://orca.cardiff.ac.uk/id/eprint/1903

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