Single-tone and two-tone time-domain large signal characterization of GaN HFETs operated in class A

McGovern, Peter, Williams, David James, Tasker, Paul J. ORCID: https://orcid.org/0000-0002-6760-7830, Benedikt, Johannes ORCID: https://orcid.org/0000-0002-9583-2349, Powell, J., Hilton, K. P., Balmer, R. S., Martin, T. and Uren, M. J. 2004. Single-tone and two-tone time-domain large signal characterization of GaN HFETs operated in class A. Presented at: IEEE MTT-S International Microwave Symposium Digest 2004, Vol 2, 2004. pp. 825-828. 10.1109/MWSYM.2004.1339092

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Abstract

GaN HFET's have been analyzed under single-tone and two-tone excitation, using an error corrected time domain measurement system. This approach yields a better understanding of the device's non-linear behavior, particularly with respect to intermodulation distortion. It has been found that under single-tone excitation, the AlGaN/GaN HFET produced fundamental and third harmonic output with virtually constant phase (no AM-PM), even when operated well into compression. This would imply that the device should exhibit symmetric intermodulation products under two-tone excitation, and this was experimentally found to be the case. These results further indicates that AlGaN/GaN HFET technology has the potential for use not only in high power and high efficiency, but also high linearity applications.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Engineering
Uncontrolled Keywords:	AlGaN-GaN ; AlGaN/GaN HFET technology ; constant phase ; error corrected time domain measurement system ; high linearity applications ; intermodulation distortion ; nonlinear properties ; single-tone time domain ; third harmonic output ; two-tone time domain
ISSN:	0149645X
Last Modified:	17 Oct 2022 09:03
URI:	https://orca.cardiff.ac.uk/id/eprint/1942

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