Alghanim, A., Lees, Jonathan  ORCID: https://orcid.org/0000-0002-6217-7552, Williams, T., Benedikt, Johannes ORCID: https://orcid.org/0000-0002-9583-2349 and Tasker, Paul J. ORCID: https://orcid.org/0000-0002-6760-7830
2007.
Using active IF load-pull to investigate electrical base-band induced memory effects in high-power LDMOS transistors.
Presented at: Asia-Pacific Microwave Conference (APMC 2007),
Bangkok, Thailand,
IEEE,
pp. 1-4.
10.1109/APMC.2007.4554737
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Abstract
Memory effects are generally attributable to thermal, electrical, packaging and/ or surface effects. This behaviour in turn impacts overall linearity and importantly the suitability of a power amplifier (PA) to linearisation through pre-distortion. It is assumed that electrical memory introduced by the low-frequency baseband impedance environments associated with the power amplifier bias insertion networks being frequency dependent represents a significant contributor to overall observed memory effects in high-power LDMOS PA design. In this work, baseband or IF active load-pull is used to provide an effective way to engineer all the significant IF components generated as a result of multi-tone excitation, independent of modulation frequency. Specific IF impedance environments are presented to a device with this approach in order to probe the sensitivity to IF impedance variations. These investigations are performed on a 12 W LDMOS device characterised at 2.1 GHz within a purpose built, high-power measurement system, that allows the collection of both RF and IF voltage and current waveforms along with all associated impedances.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Schools: | Engineering |
| Publisher: | IEEE |
| Last Modified: | 19 Oct 2022 09:31 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/21385 |
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