Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements

Shangina, E. L., Smirnov, K. V., Morozov, Dmitry L., Kovalyuk, V. V., Goltsman, G. N., Verevkin, A. A., Toropov, A. I. and Mauskopf, Philip Daniel ORCID: https://orcid.org/0000-0001-6397-5516 2011. Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements. Semiconductor Science and Technology 26 (2) , 025013. 10.1088/0268-1242/26/2/025013

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Abstract

We present measurements of the energy relaxation time, τε, of electrons in a single \rm AlGaAs/GaAs heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε∝nγs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm−2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QB Astronomy
Publisher:	Institute of Physics
ISSN:	0268-1242
Last Modified:	19 Oct 2022 09:54
URI:	https://orca.cardiff.ac.uk/id/eprint/22615

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