Sobiesierski, Angela and Smowton, Peter Michael  ORCID: https://orcid.org/0000-0002-9105-4842
2011.
Quantum-dot lasers: physics and applications.
Bhattacharya, P., Fornari, R. and Kamimura, H., eds.
Comprehensive Semiconductor Science and Technology: Volume 6: Devices and Applications,
Burlington, VT:
Elsevier,
pp. 353-384.
(10.1016/B978-0-44-453153-7.00034-1)
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Abstract
Theoretical analysis of the effect of reduction in dimensionality on the density of states for semiconductor material results in an idealized array of electrically isolated quantum-dots (QDs) with discrete states. Following consideration of the self-assembled growth process, this is replaced with a more accurate picture of a coupled QD-wetting layer electronic system. The factors that influence the gain that can be achieved from direct current injection of self-assembled QD material and the recombination pathways that influence the behavior of QD lasers are then discussed. In particular, p-doping, multilayer QDs, and tunnel-injection QD lasers (TI-QD) are introduced as methods to maximize performance of QD lasers. The properties that lead to particular benefits in using QDs as the active layer of a semiconductor laser are described. The chapter concludes with a discussion of QDs employed in high-power lasers, mode-locked lasers, semiconductor optical amplifiers, single-photon sources, and semiconductor integrated optoelectronics – five important application areas that take advantage of different elements of the properties of QD ensembles.
| Item Type: | Book Section |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Subjects: | Q Science > QC Physics |
| Publisher: | Elsevier |
| ISBN: | 9780444531537 |
| Related URLs: | |
| Last Modified: | 19 Oct 2022 10:31 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/24619 |
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