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Quantum-dot lasers: physics and applications

Sobiesierski, Angela and Smowton, Peter Michael ORCID: 2011. Quantum-dot lasers: physics and applications. Bhattacharya, P., Fornari, R. and Kamimura, H., eds. Comprehensive Semiconductor Science and Technology: Volume 6: Devices and Applications, Burlington, VT: Elsevier, pp. 353-384. (10.1016/B978-0-44-453153-7.00034-1)

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Theoretical analysis of the effect of reduction in dimensionality on the density of states for semiconductor material results in an idealized array of electrically isolated quantum-dots (QDs) with discrete states. Following consideration of the self-assembled growth process, this is replaced with a more accurate picture of a coupled QD-wetting layer electronic system. The factors that influence the gain that can be achieved from direct current injection of self-assembled QD material and the recombination pathways that influence the behavior of QD lasers are then discussed. In particular, p-doping, multilayer QDs, and tunnel-injection QD lasers (TI-QD) are introduced as methods to maximize performance of QD lasers. The properties that lead to particular benefits in using QDs as the active layer of a semiconductor laser are described. The chapter concludes with a discussion of QDs employed in high-power lasers, mode-locked lasers, semiconductor optical amplifiers, single-photon sources, and semiconductor integrated optoelectronics – five important application areas that take advantage of different elements of the properties of QD ensembles.

Item Type: Book Section
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Elsevier
ISBN: 9780444531537
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Last Modified: 19 Oct 2022 10:31

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