Borri, Paola ![]() ![]() |
Official URL: http://proceedings.spiedigitallibrary.org/proceedi...
Abstract
We have compared the gain dynamics of the ground state excitonic transition between undoped and p-doped electrically-pumped InGaAs quantum-dot optical amplifiers, for temperatures from 300 K to 20 K. A pump-probe differential transmission technique in heterodyne detection with sub-picosecond time resolution was used. The comparison shows that in the gain regime at high temperatures the recovery dynamics of the p-doped sample is slower than in the undoped device operating at the same modal gain, due to a reduced electron reservoir in the excited states. Conversely, at 20 K the initial gain dynamics is faster in the p-doped device due to hole-hole scattering.
Item Type: | Conference or Workshop Item (Paper) |
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Date Type: | Publication |
Status: | Published |
Schools: | Biosciences Physics and Astronomy |
Subjects: | T Technology > T Technology (General) T Technology > TA Engineering (General). Civil engineering (General) T Technology > TK Electrical engineering. Electronics Nuclear engineering |
Uncontrolled Keywords: | semiconductor quantum dots; ultrafast dynamics; semiconductor optical amplifiers |
Publisher: | SPIE - International Society for Optical Engineering |
ISBN: | 9780819474575 |
Last Modified: | 06 Dec 2022 09:35 |
URI: | https://orca.cardiff.ac.uk/id/eprint/25308 |
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