Intersubband electroluminescence from Si/SiGe cascade emitters at terahertz frequencies

Lynch, Stephen Anthony ORCID: https://orcid.org/0000-0001-9818-2284, Bates, R., Paul, D. J., Norris, D. J., Cullis, A. G., Ikonic, Z., Kelsall, R. W., Harrison, P., Arnone, D. D. and Pidgeon, C. R. 2002. Intersubband electroluminescence from Si/SiGe cascade emitters at terahertz frequencies. Applied Physics Letters 81 (9) , 1543. 10.1063/1.1501759

Preview

PDF - Published Version Download (334kB) | Preview

Abstract

The quantum cascade laser provides one possible method of realizing high efficiency light emitters in indirect band gap materials such as silicon. Electroluminescence results from Si/SiGe quantum cascade emitters are presented demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions. In surface-normal emission, only light-hole to heavy-hole electroluminescence is observed as predicted by theory. Intersubband emission is demonstrated at 2.9 THz (103 μm wavelength), 8.9 THz (33.7 μm), and 16.2 THz (18.5 μm) from the Si/SiGe quantum cascade heterostructures.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	silicon, Ge-Si alloys, elemental semiconductors, semiconductor lasers, electroluminescence, interface states, band structure
Additional Information:	3 Page Article. Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0003-6951/ (accessed 21/02/2014).
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date of First Compliant Deposit:	30 March 2016
Last Modified:	10 May 2023 02:44
URI:	https://orca.cardiff.ac.uk/id/eprint/25313

Citation Data

Cited 136 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item