Lynch, Stephen Anthony  ORCID: https://orcid.org/0000-0001-9818-2284, Bates, R., Paul, D. J., Norris, D. J., Cullis, A. G., Ikonic, Z., Kelsall, R. W., Harrison, P., Arnone, D. D. and Pidgeon, C. R.
2002.
Intersubband electroluminescence from Si/SiGe cascade emitters at terahertz frequencies.
Applied Physics Letters
81
(9)
, 1543.
10.1063/1.1501759
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Official URL: http://dx.doi.org/10.1063/1.1501759
Abstract
The quantum cascade laser provides one possible method of realizing high efficiency light emitters in indirect band gap materials such as silicon. Electroluminescence results from Si/SiGe quantum cascade emitters are presented demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions. In surface-normal emission, only light-hole to heavy-hole electroluminescence is observed as predicted by theory. Intersubband emission is demonstrated at 2.9 THz (103 μm wavelength), 8.9 THz (33.7 μm), and 16.2 THz (18.5 μm) from the Si/SiGe quantum cascade heterostructures.
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Subjects: | Q Science > QC Physics |
| Uncontrolled Keywords: | silicon, Ge-Si alloys, elemental semiconductors, semiconductor lasers, electroluminescence, interface states, band structure |
| Additional Information: | 3 Page Article. Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0003-6951/ (accessed 21/02/2014). |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| Date of First Compliant Deposit: | 30 March 2016 |
| Last Modified: | 10 May 2023 02:44 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/25313 |
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