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Intersubband electroluminescence from Si/SiGe cascade emitters at terahertz frequencies

Lynch, Stephen Anthony, Bates, R., Paul, D. J., Norris, D. J., Cullis, A. G., Ikonic, Z., Kelsall, R. W., Harrison, P., Arnone, D. D. and Pidgeon, C. R. 2002. Intersubband electroluminescence from Si/SiGe cascade emitters at terahertz frequencies. Applied Physics Letters 81 (9) , 1543. 10.1063/1.1501759

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The quantum cascade laser provides one possible method of realizing high efficiency light emitters in indirect band gap materials such as silicon. Electroluminescence results from Si/SiGe quantum cascade emitters are presented demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions. In surface-normal emission, only light-hole to heavy-hole electroluminescence is observed as predicted by theory. Intersubband emission is demonstrated at 2.9 THz (103 μm wavelength), 8.9 THz (33.7 μm), and 16.2 THz (18.5 μm) from the Si/SiGe quantum cascade heterostructures.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: silicon, Ge-Si alloys, elemental semiconductors, semiconductor lasers, electroluminescence, interface states, band structure
Additional Information: 3 Page Article. Pdf uploaded in accordance with publisher's policy at (accessed 21/02/2014).
Publisher: American Institute of Physics
ISSN: 0003-6951
Date of First Compliant Deposit: 30 March 2016
Last Modified: 04 Jun 2017 03:43

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