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Intersubband electroluminescence from Si/SiGe cascade emitters at terahertz frequencies

Lynch, Stephen Anthony ORCID:, Bates, R., Paul, D. J., Norris, D. J., Cullis, A. G., Ikonic, Z., Kelsall, R. W., Harrison, P., Arnone, D. D. and Pidgeon, C. R. 2002. Intersubband electroluminescence from Si/SiGe cascade emitters at terahertz frequencies. Applied Physics Letters 81 (9) , 1543. 10.1063/1.1501759

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The quantum cascade laser provides one possible method of realizing high efficiency light emitters in indirect band gap materials such as silicon. Electroluminescence results from Si/SiGe quantum cascade emitters are presented demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions. In surface-normal emission, only light-hole to heavy-hole electroluminescence is observed as predicted by theory. Intersubband emission is demonstrated at 2.9 THz (103 μm wavelength), 8.9 THz (33.7 μm), and 16.2 THz (18.5 μm) from the Si/SiGe quantum cascade heterostructures.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: silicon, Ge-Si alloys, elemental semiconductors, semiconductor lasers, electroluminescence, interface states, band structure
Additional Information: 3 Page Article. Pdf uploaded in accordance with publisher's policy at (accessed 21/02/2014).
Publisher: American Institute of Physics
ISSN: 0003-6951
Date of First Compliant Deposit: 30 March 2016
Last Modified: 19 Oct 2022 10:43

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