Ultrafast conditional carrier dynamics in semiconductor quantum dots

Borri, Paola ORCID: https://orcid.org/0000-0002-7873-3314 and Langbein, Wolfgang Werner ORCID: https://orcid.org/0000-0001-9786-1023 2011. Ultrafast conditional carrier dynamics in semiconductor quantum dots. Presented at: Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV, San Francisco, CA, USA, 23-26 January 2011. Published in: Tsen, Kong-Thon, Song, Jin-Joo, Betz, Markus and Elezzabi, Abdulhakem Y. eds. Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV. Proceedings of SPIE , vol.7937 SPIE, p. 793704. 10.1117/12.873835

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Abstract

We provide direct evidence that the macroscopic response of the gain dynamics in electrically-pumped In- GaAs/GaAs quantum dots is a superposition of intradot relaxation dynamics from microstates with multiple discrete carrier numbers. The gain recovery in the presence of an optical pre-pump fully depleting the ground-state gain is measured to be faster than without pre-pump. This effect, opposite to expectations from rate equations with mean-field carrier distributions, is due to a conditional gain recovery in which microstates with slow internal dynamics are suppressed by the pre-pump. The effect is evident at 15K and still observable at 300 K, beneficial for high-speed optical signal processing.

Item Type:	Conference or Workshop Item (Paper)
Status:	Published
Schools:	Schools > Biosciences
Subjects:	T Technology > T Technology (General) T Technology > TA Engineering (General). Civil engineering (General) T Technology > TK Electrical engineering. Electronics Nuclear engineering
Publisher:	SPIE
ISBN:	9780819484741
ISSN:	0277-786X
Funders:	EPSRC
Related URLs:	http://spie.org/x648.html?product_id=873...
Last Modified:	06 Nov 2022 13:04
URI:	https://orca.cardiff.ac.uk/id/eprint/26008

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