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Intrinsic performance of InGaAs/GaAs quantum dot lasers

Thomson, John Duncan, Smowton, Peter Michael ORCID:, Summers, Huw David, Herrmann, E., Blood, Peter and Hopkinson, M. 2000. Intrinsic performance of InGaAs/GaAs quantum dot lasers. Presented at: LEOS 2000: 13th Annual Meeting: IEEE Lasers and Electro-Optics Society: 2000 Annual Meeting, Rio Grande, Puerto Rico, 15-16 November 2000. LEOS 2000: 13th Annual Meeting IEEE Lasers and Electro-Optics Society. , vol.2 Los Alamitos, CA: IEEE, pp. 308-309. 10.1109/LEOS.2000.890801

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We have studied the properties of quantum dot lasers comprising a single layer of InGaAs dots set in a single GaAs quantum well, 100 A wide, in a waveguide core region of AlGaAs with cladding layers of AlGaAs. Measurements have been made of the quasi-Fermi level separation, optical mode loss and gain spectra as a function of temperature by a single pass technique using a device with a segmented contact and of the spontaneous emission spectra using light emerging from a narrow window in the device top contact.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: IEEE
Last Modified: 20 Oct 2022 09:11

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