Experimental investigation of the effect of wetting-layer states on the gain-current characteristic of quantum-dot lasers

Matthews, Daniel Richard, Summers, Huw David, Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842 and Hopkinson, M. 2002. Experimental investigation of the effect of wetting-layer states on the gain-current characteristic of quantum-dot lasers. Applied Physics Letters 81 (26) , pp. 4904-4906. 10.1063/1.1532549

Preview

PDF - Published Version Download (226kB) | Preview

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	indium compounds, gallium arsenide, III-V semiconductors, quantum dot lasers, population inversion, surface states
Additional Information:	Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0003-6951/ (accessed 21/02/2014).
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date of First Compliant Deposit:	30 March 2016
Last Modified:	03 May 2023 21:53
URI:	https://orca.cardiff.ac.uk/id/eprint/30939

Citation Data

Cited 152 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item