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Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm

Pope, Iestyn ORCID:, Smowton, Peter Michael ORCID:, Blood, Peter, Thomson, John Duncan, Kappers, M. J. and Humphreys, C. J. 2003. Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm. Applied Physics Letters 82 (17) , pp. 2755-2757. 10.1063/1.1570515

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Pulsed light–current characteristics of InGaN/GaN quantum welllight-emitting diodes have been measured as a function of temperature, with sublinear behavior observed over the whole temperature range, 130–330 K. A distinctive temperature dependence is also noted where the light output, at a fixed current, initially increases with temperature, before reaching a maximum at 250 K and then decreases with subsequent increases in temperature. On the basis of a drift diffusion model, we can explain the sublinear light–current characteristics and the temperature dependence by the influence of the large acceptor ionization energy in Mg-doped GaN together with a triangular density of states function characteristic of localized states. Without the incorporation of localization effects, we are unable to reproduce the temperature dependence whilst maintaining emission at the observed wavelength. This highlights the importance of localization effects on device performance.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: indium compounds, gallium compounds, III-V semiconductors, semiconductor quantum wells, quantum well devices, light emitting diodes, impurity states, electronic density of states, localised states, semiconductor device models, leakage currents, magnesium, radiative lifetimes
Additional Information: Pdf uploaded in accordance with publisher's policy at (accessed 21/02/2014).
Publisher: American Institute of Physics
ISSN: 0003-6951
Date of First Compliant Deposit: 30 March 2016
Last Modified: 08 Oct 2023 11:02

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