Formation of shallow acceptor states in the surface region of thin film diamond

Williams, Oliver Aneurin ORCID: https://orcid.org/0000-0002-7210-3004, Whitfield, M. D., Jackman, R. B., Foord, J. S., Butler, J. E. and Nebel, C. E. 2001. Formation of shallow acceptor states in the surface region of thin film diamond. Applied Physics Letters 78 (22) , pp. 3460-3462. 10.1063/1.1345806

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Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	diamond, elemental semiconductors, carrier density, Hall effect, carrier mobility, semiconductor thin films, hydrogenation, impurity states, surface states
Additional Information:	Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0003-6951/ (accessed 21/02/2014).
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date of First Compliant Deposit:	30 March 2016
Last Modified:	22 May 2023 08:52
URI:	https://orca.cardiff.ac.uk/id/eprint/34123

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