Hydrogen-induced transport properties of holes in diamond surface layers

Nebel, C. E., Sauerer, C., Ertl, F., Stutzmann, M., Graeff, C. F. O., Bergonzo, P., Williams, Oliver Aneurin ORCID: https://orcid.org/0000-0002-7210-3004 and Jackman, R. 2001. Hydrogen-induced transport properties of holes in diamond surface layers. Applied Physics Letters 79 (27) , pp. 4541-4543. 10.1063/1.1429756

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Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	diamond, hydrogen, surface conductivity, surface topography, Hall effect, hole density, hole mobility, localised states
Additional Information:	Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0003-6951/ (accessed 21/02/2014).
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date of First Compliant Deposit:	30 March 2016
Last Modified:	10 May 2023 17:43
URI:	https://orca.cardiff.ac.uk/id/eprint/34125

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