Homoepitaxial diamond growth for the control of surface conductive carrier transport properties

Williams, Oliver Aneurin ORCID: https://orcid.org/0000-0002-7210-3004 and Jackman, R. B. 2004. Homoepitaxial diamond growth for the control of surface conductive carrier transport properties. Journal of Applied Physics 96 (7) , pp. 3742-3747. 10.1063/1.1789275

Preview

PDF - Published Version Download (772kB) | Preview

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	diamond, elemental semiconductors, semiconductor growth, surface conductivity, electron mobility, semiconductor epitaxial layers, electron density, plasma CVD, Hall mobility
Additional Information:	Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0021-8979/ (accessed 21/02/2014).
Publisher:	American Institute of Physics
ISSN:	0021-8979
Date of First Compliant Deposit:	30 March 2016
Last Modified:	19 May 2023 02:06
URI:	https://orca.cardiff.ac.uk/id/eprint/34142

Citation Data

Cited 10 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item