Williams, Oliver Aneurin  ORCID: https://orcid.org/0000-0002-7210-3004 and Jackman, R. B.
2004.
Homoepitaxial diamond growth for the control of surface conductive carrier transport properties.
Journal of Applied Physics
96
(7)
, pp. 3742-3747.
10.1063/1.1789275
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Official URL: http://jap.aip.org/resource/1/japiau/v96/i7/p3742_...
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Subjects: | Q Science > QC Physics |
| Uncontrolled Keywords: | diamond, elemental semiconductors, semiconductor growth, surface conductivity, electron mobility, semiconductor epitaxial layers, electron density, plasma CVD, Hall mobility |
| Additional Information: | Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0021-8979/ (accessed 21/02/2014). |
| Publisher: | American Institute of Physics |
| ISSN: | 0021-8979 |
| Date of First Compliant Deposit: | 30 March 2016 |
| Last Modified: | 19 May 2023 02:06 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/34142 |
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