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Homoepitaxial diamond growth for the control of surface conductive carrier transport properties

Williams, Oliver Aneurin ORCID: https://orcid.org/0000-0002-7210-3004 and Jackman, R. B. 2004. Homoepitaxial diamond growth for the control of surface conductive carrier transport properties. Journal of Applied Physics 96 (7) , pp. 3742-3747. 10.1063/1.1789275

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Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: diamond, elemental semiconductors, semiconductor growth, surface conductivity, electron mobility, semiconductor epitaxial layers, electron density, plasma CVD, Hall mobility
Additional Information: Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0021-8979/ (accessed 21/02/2014).
Publisher: American Institute of Physics
ISSN: 0021-8979
Date of First Compliant Deposit: 30 March 2016
Last Modified: 19 May 2023 02:06
URI: https://orca.cardiff.ac.uk/id/eprint/34142

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