A new diamond based heterostructure diode

Kohn, E., Denisenko, A., Kubovic, M., Zimmermann, T., Williams, Oliver Aneurin ORCID: https://orcid.org/0000-0002-7210-3004 and Gruen, D. M. 2006. A new diamond based heterostructure diode. Semiconductor Science and Technology 21 (4) , L32-L35. 10.1088/0268-1242/21/4/L02

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Abstract

A diamond based heterostructure diode containing a p-type doped diamond active layer and an n-type doped ultra-nano-crystalline top layer has been investigated. Analysis suggests that the configuration is that of a merged diode, containing two areas of different interfacial barrier potentials in parallel related to the ultra-nano-crystalline grains and the grain boundaries, respectively. Thus this heterostructure may be ideally suited to combine low forward losses with high blocking voltages in diamond high power rectifiers.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Institute of Physics
ISSN:	0268-1242
Last Modified:	21 Oct 2022 08:42
URI:	https://orca.cardiff.ac.uk/id/eprint/34149

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