Paynter, M., Bensmida, S., Morris, K. A., McGeehan, J. P., Akmal, Muhammad, Lees, Jonathan ![]() ![]() ![]() |
Official URL: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?...
Abstract
This paper proposes a novel GaN HEMT non-linear model extraction method from small-signal cold S-parameters and large signal waveform measurements, here demonstrated in simulation. These waveform measurements are taken in simple 50Ω conditions, but will be shown to be suitable for switching-mode power amplifier (PA) designs. Class-F and Continuous Class-F switching modes will be demonstrated with this model and verified by comparison with existing work which uses load-pull measurements to achieve the same results.
Item Type: | Conference or Workshop Item (Paper) |
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Date Type: | Publication |
Status: | Published |
Schools: | Engineering |
Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
Uncontrolled Keywords: | Gallium nitride; Microwave amplifiers; Microwave circuits; Microwave integrated circuits; Power amplifiers; Switches |
Publisher: | IEEE |
ISBN: | 9781612842363 |
Last Modified: | 21 Oct 2022 09:33 |
URI: | https://orca.cardiff.ac.uk/id/eprint/36840 |
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