A surface-gated InSb quantum well single electron transistor

Orr, J. M. S., Buckle, Philip Derek ORCID: https://orcid.org/0000-0001-9508-7783, Fearn, M., Storey, C. J., Buckle, L. and Ashley, T. 2007. A surface-gated InSb quantum well single electron transistor. New Journal of Physics 9 (8) , 261. 10.1088/1367-2630/9/8/261

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Abstract

Single electron charging effects in a surface-gated InSb/AlInSb QW structure are reported. This material, due to its large g-factor and light effective mass, offers considerable advantages over more commonly used materials, such as GaAs, for quantum information processing devices. However, differences in material and device technology result in significant processing challenges. Simple Coulomb blockade and quantized confinement models are considered to explain the observation of conductance oscillations in these structures. The charging energy (e2/C) is found to be comparable with the energy spectrum for single particle states (ΔE).

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	IOP
ISSN:	1367-2630
Last Modified:	19 May 2023 01:39
URI:	https://orca.cardiff.ac.uk/id/eprint/36990

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