Bridge, C. J., Dawson, P., Buckle, Philip Derek ![]() |
Abstract
As-grown n-CdTe/n-CdS solar cell structures deposited on tin oxide-coated glass have been studied using low temperature photoluminescence spectroscopy. The structures were annealed in air at temperatures up to 600 °C. For anneal temperatures of 400-450 °C, and above, acceptor related transitions at around 1.45, 1.51 and 1.56 eV are tentatively ascribed to copper, oxygen and VCd-related centres, respectively. Illuminated current-voltage measurements have shown that these findings are consistent with considerable improvements in short circuit current density that are believed to be associated with n- to p-type conversion of the CdTe film.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Subjects: | Q Science > QC Physics |
Publisher: | IOP Publishing |
ISSN: | 0268-1242 |
Last Modified: | 19 May 2023 01:40 |
URI: | https://orca.cardiff.ac.uk/id/eprint/36993 |
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