Charge accumulation in GaAs/AlGaAs triple barrier resonant tunneling structures

Buckle, Philip Derek ORCID: https://orcid.org/0000-0001-9508-7783, Dawson, P., Kuo, C. Y., Roberts, A. H., Truscott, W. S., Lynch, M. and Missous, M. 1998. Charge accumulation in GaAs/AlGaAs triple barrier resonant tunneling structures. Journal of Applied Physics 83 (2) , pp. 882-887. 10.1063/1.366772

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Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	gallium arsenide, aluminium compounds, III-V semiconductors, semiconductor heterojunctions, quantum interference phenomena, tunnelling, photoluminescence, semiconductor quantum wells
Additional Information:	Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0021-8979/ (accessed 21/02/2014).
Publisher:	American Institute of Physics
ISSN:	0021-8979
Date of First Compliant Deposit:	30 March 2016
Last Modified:	20 May 2023 20:10
URI:	https://orca.cardiff.ac.uk/id/eprint/36994

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