Low temperature impact ionization in indium antimonide high performance quantum well field effect transistors

Orr, J. M. S., Buckle, Philip Derek ORCID: https://orcid.org/0000-0001-9508-7783, Fearn, M., Giavaras, G., Wilding, P. J., Bartlett, C. J., Emeny, M. T., Buckle, L., Jefferson, J. H. and Ashley, T. 2006. Low temperature impact ionization in indium antimonide high performance quantum well field effect transistors. Journal of Applied Physics 99 (8) , 083703. 10.1063/1.2190075

Preview

PDF - Published Version Download (255kB) | Preview

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	indium compounds, aluminium compounds, narrow band gap semiconductors, quantum well devices, field effect transistors, leakage currents, impact ionisation, Monte Carlo methods
Additional Information:	Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0021-8979/ (accessed 21/02/2014).
Publisher:	American Institute of Physics
ISSN:	0021-8979
Date of First Compliant Deposit:	30 March 2016
Last Modified:	19 May 2023 19:45
URI:	https://orca.cardiff.ac.uk/id/eprint/37006

Citation Data

Cited 4 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item